DocumentCode :
3531026
Title :
GaAs-based quantum-cascade laser diodes
Author :
Anders, S. ; Gornik, E. ; Schrenk, W. ; Strasser, G.
Author_Institution :
Inst. of Solid-State Electron., Tech. Univ. of Vienna, Wien, Austria
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
235
Lastpage :
238
Abstract :
In this contribution, we discuss our recent results on GaAs-based quantum cascade lasers. In general, we strive to achieve high-power room temperature operation. The best performance in GaAs-based Fabry-Perot quantum cascade laser diodes (pulsed operation) show peak powers of more than 3W at liquid nitrogen temperatures and more than 300 mW at room temperature at an emission wavelength of 9 microns. Lasing up to 100°C lattice temperature was detected. Single mode emitting distributed feedback lasers show more than 80mW optical peak power at room temperature. Furthermore, to explore the spectral behavior of the lasers, we processed cavities of different geometries, that is, disk- and ring-shaped cavities.
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; quantum cascade lasers; semiconductor device measurement; 100 degC; 3 W; 300 K; 300 mW; 77 K; 80 mW; 9 micron; GaAs; GaAs-based Fabry-Perot quantum cascade laser diodes; disk-shaped cavities; ring-shaped cavities; single mode emitting distributed feedback lasers; Diode lasers; Distributed feedback devices; Fabry-Perot; Laser feedback; Laser modes; Nitrogen; Optical pulses; Quantum cascade lasers; Ring lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205358
Filename :
1205358
Link To Document :
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