• DocumentCode
    3531034
  • Title

    A nonlinear S-parameters behavioral model for RF LNAs

  • Author

    Riad, Tamer ; Jing, Qi

  • Author_Institution
    Mentor Graphics Corp., San Jose, CA, USA
  • fYear
    2010
  • fDate
    3-4 Aug. 2010
  • Firstpage
    106
  • Lastpage
    111
  • Abstract
    A nonlinear behavioral model for radio frequency low noise amplifiers (LNA´s) is presented. The model captures effects of nonlinearity, output power saturation, noise figure and port impedance mismatch. A high-level S-parameters approach is adopted during the model derivation. Consequently, the model inherits the S-parameters dual ability to characterize the transfer function between ports while including their impedances. The model derivation is thoroughly discussed showing how the effects of intermodulation as well as output power saturation can be included within the S-parameters representation for the block. Furthermore, in order to minimize the calibration effort, the model generics are made such that they map directly to typical LNA specifications. It follows that the model as implemented is not topology specific and can be easily calibrated to serve within top-down or bottom-up verification flows. Finally, the model accuracy is validated against reference transistor level simulations. Results comparison shows good agreement is attained.
  • Keywords
    S-parameters; low noise amplifiers; transfer functions; RF LNA; S-parameters representation; intermodulation; model derivation; noise figure; nonlinear S-parameters behavioral model; nonlinearity effects; output power saturation; port impedance mismatch; radio frequency low noise amplifiers; transfer function; Calibration; Impedance; Low-noise amplifiers; Noise figure; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Transfer functions; Behavioral model; LNA; S-parameters; intermodulation; non-linearity; radio-frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4244-7809-5
  • Type

    conf

  • DOI
    10.1109/ASQED.2010.5548227
  • Filename
    5548227