Title :
High-quality 1.3-μm AlGaInAs MQW growth on a grating and its application to BH DFB-LDs for uncooled 10-Gb/s operation
Author :
Kobayashi, R. ; Okuda, T. ; Muroya, Y. ; Tsuruoka, K. ; Koui, T. ; Ohsawa, Y. ; Tsukuda, T. ; Nakamura, T. ; Sugou, S.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Shiga, Japan
Abstract :
A process for growing a high-quality AlGaInAs MQW on a grating has been developed and applied to fabricate a 1.3-μm AlGaInAs BH DFB-LD. A low threshold current of 20 mA, a high slope efficiency of 0.31 W/A at 85°C and a high CW operating temperature of 120°C were obtained for a 250-μm-long device with antireflective and high-reflective coated facets. A clear eye opening under 10-Gb/s direct modulation was also confirmed at 85°C.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; 1.3 micron; 120 degC; 20 mA; 250 micron; 85 degC; AlGaInAs; AlGaInAs MQW growth; BH DFB-LDs; DH-HEMTs; Epitaxial growth; Gratings; Indium phosphide; Laboratories; National electric code; Quantum well devices; Substrates; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205359
