Title :
1.3 μm GaInNAs monolithic vertical-cavity semiconductor optical amplifier
Author :
Calvez, S. ; Hopkins, J.-M. ; Macaluso, R. ; Sun, H.D. ; Dawson, Martin D.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; semiconductor device measurement; surface emitting lasers; 1.3 micron; 12.8 dB; 17.7 dB; 980 nm; GaInNAs; GaInNAs monolithic vertical-cavity semiconductor optical amplifier; on-chip gain; optical-pumping; Bandwidth; Gain; Gallium arsenide; Operational amplifiers; Optical amplifiers; Optical saturation; Power generation; Semiconductor diodes; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205360
