Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers

Author

Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

269

Lastpage

272

Abstract

1.26-μm-emitting MOCVD-grown InGaAsN single quantum-well lasers with barriers of E_g=1.62 eV InGaAsP exhibit a room-temperature threshold current density of 440 A/cm² and a characteristic temperature To as high as 128 K and 98 K in the temperature ranges of 10-50°C and 50-100°C, respectively. A growth pause annealing technique is found to be critical for achieving high photoluminescence intensity. Higher-bandgap barrier materials increase the valence band offset and lead to suppression of carrier leakage, which potentially results in improved temperature characteristics of the InGaAsN quantum-well lasers.

Keywords

III-V semiconductors; annealing; gallium arsenide; indium compounds; leakage currents; photoluminescence; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; spectral line intensity; 1.26 micron; 10 to 50 degC; 128 K; 50 to 100 degC; 98 K; InGaAsN-InGaAsP-GaAs; MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers; carrier leakage; growth pause annealing technique; photoluminescence intensity; valence band offset; Annealing; Chemical lasers; Conducting materials; Gallium arsenide; Optical materials; Photoluminescence; Quantum well lasers; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205367

Filename

1205367