In-plane resonant cavities in InP/GaInAsP/InP with photonic crystal boundaries

Author

Mulot, M. ; Qiu, M. ; Swillo, M. ; Jaskorzynska, B. ; Talneau, A. ; Anand, S.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2003

fDate

12-16 May 2003

Firstpage

296

Lastpage

299

Abstract

In-plane cavities with photonic crystal (PhC) boundaries were fabricated into an InP/GaInAsP/InP slab waveguide structure using Ar/Cl₂ based chemically assisted ion beam etching. The cavities are realized as segments of different lengths bounded by two V-shaped double or single mirrors in straight photonic crystal waveguides and were designed to have resonance in the 1.55 μm wavelength range. The optical loss inside the PhC was determined by fitting the measured transmission spectra with two-dimensional finite-difference time-domain simulations. The best results were obtained for a 6.2 μm long resonant cavity with double mirrors for which a quality factor of 460 was obtained. The results demonstrate significant improvements in the quality of PhC fabrication in this material system.

Keywords

III-V semiconductors; Q-factor; cavity resonators; finite difference time-domain analysis; gallium compounds; indium compounds; integrated optics; optical losses; photonic crystals; sputter etching; 6.2 micron; InP-GaInAsP-InP; InP/GaInAsP/InP slab waveguide structure; in-plane resonant cavities; ion beam etching; optical loss; photonic crystal boundaries; photonic crystal waveguides; quality factor; two-dimensional finite-difference time-domain simulation; Argon; Chemicals; Etching; Indium phosphide; Ion beams; Mirrors; Optical waveguides; Photonic crystals; Resonance; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205374

Filename

1205374