Title :
Suppression of Zn diffusion into absorption layers in electroabsorption (EA) modulators due to the use of Ru-doped semi-insulating InP buried heterostructures
Author :
Ogasawara, Matsuyuki ; Iga, Ryuzo ; Yamanaka, T. ; Kondo, Susumu ; Kondo, Yasuhiro
Author_Institution :
Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
Zn diffusion into the multi quantum well (MQW) absorption layer of semi-insulating InP-buried electroabsorption (EA) modulators is investigated by two methods: One is a novel experimental method in which a planer-structured test sample is used to evaluate the diffusion. The other is a simulation of the extinction characteristics of Zn-diffused MQW absorption layers at various the Zn concentrations. The Zn diffusion experiment shows that Zn diffusion is suppressed by the use of Ru-InP burying layers. Comparing device characteristics to the simulation results shows that Zn diffusion into the absorption layer is effectively suppressed in a Ru-doped InP-buried EA modulator so excellent extinction characteristics can be achieved. These results indicate that Ru-doped InP-buried EA modulators are superior to Fe-doped InP-buried ones.
Keywords :
III-V semiconductors; chemical interdiffusion; electroabsorption; extinction coefficients; indium compounds; optical modulation; ruthenium; semiconductor quantum wells; zinc; InP:Ru,Zn; MQW; Ru-doped semi-insulating InP buried heterostructures; Zn concentration; Zn diffusion suppression; absorption layers; electroabsorption modulators; extinction characteristics; Absorption; DH-HEMTs; Epitaxial growth; Frequency response; Impurities; Indium phosphide; Iron; Quantum well devices; Testing; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205376
