Title :
1-26 GHz high power p-i-n diode switch
Author :
Seung-Won Paek ; Hyun-Il Kang ; Kye-Ik Jeon ; Myung-Deuk Jeong ; Dong-Wook Kim ; Chae-Rok Lim ; Jae-Hak Lee ; Won-Sang Lee ; Jae-Eung Oh ; Ki-Woong Chung
Author_Institution :
RF Device Team, LG Corp. Inst. of Technol., Seoul, South Korea
Abstract :
Wideband high power GaAs p-i-n diode SPDT switch is presented. Insertion loss is less than 0.7 dB and isolation is better than -38 dB for 1-26 GHz frequency range. Maximum power handling capability is 35 dBm at 1.8 GHz where the bias voltage is -15 V. Composite buffer layer of superlattice and low temperature grown GaAs prevent the problems of power limitation related to epitaxial buffer layer of p-i-n diode structure.
Keywords :
III-V semiconductors; gallium arsenide; microwave switches; p-i-n diodes; semiconductor superlattices; semiconductor switches; 1 to 26 GHz; 15 V; GaAs; SPDT switch; bias voltage; composite buffer layer; epitaxial buffer layer; high power p-i-n diode switch; insertion loss; isolation; power handling capability; power limitation; superlattice; Buffer layers; Frequency; Gallium arsenide; Insertion loss; P-i-n diodes; Superlattices; Switches; Temperature; Voltage; Wideband;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861093
