DocumentCode
353125
Title
1-26 GHz high power p-i-n diode switch
Author
Seung-Won Paek ; Hyun-Il Kang ; Kye-Ik Jeon ; Myung-Deuk Jeong ; Dong-Wook Kim ; Chae-Rok Lim ; Jae-Hak Lee ; Won-Sang Lee ; Jae-Eung Oh ; Ki-Woong Chung
Author_Institution
RF Device Team, LG Corp. Inst. of Technol., Seoul, South Korea
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
505
Abstract
Wideband high power GaAs p-i-n diode SPDT switch is presented. Insertion loss is less than 0.7 dB and isolation is better than -38 dB for 1-26 GHz frequency range. Maximum power handling capability is 35 dBm at 1.8 GHz where the bias voltage is -15 V. Composite buffer layer of superlattice and low temperature grown GaAs prevent the problems of power limitation related to epitaxial buffer layer of p-i-n diode structure.
Keywords
III-V semiconductors; gallium arsenide; microwave switches; p-i-n diodes; semiconductor superlattices; semiconductor switches; 1 to 26 GHz; 15 V; GaAs; SPDT switch; bias voltage; composite buffer layer; epitaxial buffer layer; high power p-i-n diode switch; insertion loss; isolation; power handling capability; power limitation; superlattice; Buffer layers; Frequency; Gallium arsenide; Insertion loss; P-i-n diodes; Superlattices; Switches; Temperature; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861093
Filename
861093
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