Fabrication of ultra-narrow channel InP-HEMTs with high density, uniformity and controllability

Author

Shinohara, Keisuke ; Yamashita, Yoshimi ; Endoh, Akira ; Watanabe, Issei ; Hikosaka, Kohki ; Matsui, Toshiaki ; Hiyamizu, Satoshi ; Mimura, Takashi

Author_Institution

Commun. Res. Lab., Tokyo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

319

Lastpage

322

Abstract

We succeed in fabricating ultra-narrow channel InGaAs/InAlAs HEMTs with high density (up to 8.3 × 10⁴ channels/cm), uniformity and controllability by using electron-beam (EB) lithography and wet chemical etching. Electrons are confined in the narrow channels formed by using a depletion layer underneath a corrugated gate electrode. 100-nm-gate HEMTs with sub-50-nm-wide channels show good I_ds-V_ds characteristics and superior charge controllability by a two-dimensional channel squeezing effect. At low temperatures, the HEMTs exhibit clear negative differential resistance (NDR) and conductance oscillations, which are indicative of one-dimensional nature of the fabricated ultra-narrow channels.

Keywords

III-V semiconductors; aluminium compounds; electric admittance; electron beam lithography; etching; gallium arsenide; high electron mobility transistors; indium compounds; negative resistance; semiconductor device measurement; 100 nm; 50 nm; I-V characteristics; InGaAs-InAlAs; InP; NDR; conductance oscillations; electron-beam lithography; fabrication; negative differential resistance; ultra-narrow channel InP-HEMTs; wet chemical etching; Chemicals; Controllability; Electrons; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Lithography; MODFETs; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205379

Filename

1205379