Title :
Counting rate performance measurement of newly developed Si/CdTe Compton camera for biological and medical applications
Author :
Yamaguchi, Mitsutaka ; Kawachi, Naoki ; Kamiya, Tomihiro ; Suzui, Nobuo ; Fujimaki, Shu ; Odaka, Hirokazu ; Ishikawa, Shinnosuke ; Kokubun, Motohide ; Watanabe, Shin ; Takahashi, Tadayuki ; Shimada, Hirofumi ; Arakawa, Kazuo ; Suzuki, Yoshiyuki ; Torikai,
Author_Institution :
Japan Atomic Energy Agency, Takasaki, Japan
fDate :
Oct. 30 2010-Nov. 6 2010
Abstract :
In this study, the counting rate performance of a newly developed Compton camera for biological and medical applications was investigated; further, the sensitivity profile of this highly complicated imaging system was measured using 22Na and 18F point gamma-ray sources. 22Na was used to assess the imaging ability of this camera against the point source, and the intense 18F point source of 200 MBq was used to measure the sensitivity profiles of this camera for a range of counting rates over a short period.
Keywords :
II-VI semiconductors; cadmium compounds; elemental semiconductors; radioisotope imaging; silicon; silicon radiation detectors; wide band gap semiconductors; Compton camera; Si-CdTe; biological applications; counting rate performance; medical applications; point gamma ray sources; radioactivity 200 MBq; sensitivity profile; Cameras; Decision support systems; Detectors; Extraterrestrial measurements; Head; Silicon;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-9106-3
DOI :
10.1109/NSSMIC.2010.5874127
