Title :
Demonstration of a high efficiency nonuniform monolithic gallium-nitride distributed amplifier
Author :
Lee, S. ; Green, B. ; Chu, K. ; Webb, K.J. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A monolithic gallium-nitride (GaN) dual-gate HEMT distributed amplifier has been designed which offers increased efficiency by removal of the drain line dummy load. This amplifier uses a dual-gate cascode gain cell to provide higher gain and power with a wideband frequency response. A fabricated four-stage nonuniform distributed amplifier has validated this approach.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MMIC; frequency response; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; GaN dual-gate HEMT; dual-gate cascode gain cell; four-stage amplifier; high efficiency amplifier; nonuniform monolithic distributed amplifier; wideband frequency response; Capacitance; Coplanar waveguides; Distributed amplifiers; Gallium nitride; HEMTs; Impedance; MMICs; Silicon carbide; Substrates; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861116
