Title :
50-Gbit/s AGC and modulator driver amplifier ICs based on InP/InGaAs HBT technology
Author :
Watanabe, Koichi ; Hashimoto, Masashi ; Kudo, Hiromi ; Uchiyama, Hiroyulu ; Ohta, Hiroshi ; Ouchi, Kiyoshi ; Takeyari, Ryoji
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We demonstrated first 50-Gbit/s operation of AGC and modulator driver amplifier ICs based on InP/InGaAs heterojunction-bipolar-transistor (HBT) technology aimed for 40-Gbit/s optical transceivers equipped with over 20% forward error correction (FEC).
Keywords :
amplifiers; automatic gain control; bipolar analogue integrated circuits; driver circuits; forward error correction; optical receivers; optical transmitters; transceivers; 40 Gbit/s; 50 Gbit/s; AGC; InP-InGaAs; InP/InGaAs HBT technology; InP/InGaAs heterojunction-bipolar-transistor technology; forward error correction; modulator driver amplifier IC; optical transceivers; Driver circuits; Forward error correction; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Operational amplifiers; Optical amplifiers; Optical modulation; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205392
