DocumentCode
3531519
Title
Analysis of the Pull-In Phenomenon in Microelectromechanical Varactors
Author
Roy, Anindya Lal ; Bhattacharya, Anirban ; Chaudhuri, Ritesh Ray ; Bhattacharyya, Tarun Kanti
Author_Institution
Adv. Technol. Dev. Centre, Indian Inst. of Technol., Kharagpur, India
fYear
2012
fDate
7-11 Jan. 2012
Firstpage
185
Lastpage
190
Abstract
High-Q factor voltage controlled oscillators (VCO) need a wide tuning range and low phase noise over gigahertz ranges of frequency which depends on the tunability of the capacitors in the LC tank circuit. The reasons behind the development of a micro electro mechanical (MEM) varactor were the difficulties encountered in the realization of on-chip variable capacitors having low phase noise and high quality factors with a wide tuning range in the span of frequencies over process and temperature variations. This paper presents an efficient closed-form model for determination of the pull-in voltage in a surface micro machined MEM varactor which is a factor directly affecting the tunability of the device. The nonlinear spring hardening effects associated with proper load-deflection characteristics of clamped plates and the electrostatic spring softening effects due to the parallel-plate and fringing field capacitances have been taken into account with the dimensions of the device optimized through finite element analysis (FEA).
Keywords
Q-factor; finite element analysis; micromechanical devices; varactors; voltage-controlled oscillators; FEA; LC tank circuit; electrostatic spring softening effects; finite element analysis; fringing field capacitances; high-Q factor VCO; high-Q factor voltage controlled oscillators; load-deflection characteristics; micromachined MEM varactor; micromachined microelectromechanical varactors; on-chip variable capacitors; parallel-plate capacitances; pull-in phenomenon; Analytical models; Capacitance; Electrodes; Electrostatics; Force; Springs; Varactors; MEM; electrostatic actuation; nanoindentation; pull-in; varactor;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design (VLSID), 2012 25th International Conference on
Conference_Location
Hyderabad
ISSN
1063-9667
Print_ISBN
978-1-4673-0438-2
Type
conf
DOI
10.1109/VLSID.2012.68
Filename
6167750
Link To Document