• DocumentCode
    3531641
  • Title

    CuPt-type ordering in In0.5Ga0.5P probed by photovoltage spectroscopy in semiconductor-electrolyte system

  • Author

    Baidus, N.V. ; Vasilevskiy, M.I. ; Gomes, M.J.M. ; Zvonkov, B.N.

  • Author_Institution
    Physico-Tech. Res. Inst., N.I. Lobachevskii Univ., Nizhny Novgorod, Russia
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    413
  • Lastpage
    414
  • Abstract
    We show the usefulness of the photovoltage (PV) spectroscopy in the semiconductor-electrolyte system for probing the electronic effects of the ordering. We compare photo-e.m.f. spectra measured for an electrolyte Schottky contact made on InGaP layers with different degree of order, to results obtained by using other spectroscopy techniques, namely, photoluminescence (PL) and planar photoconductivity (PC) measurements.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photoconductivity; semiconductor epitaxial layers; semiconductor-electrolyte boundaries; CuPt-type ordering; In0.5Ga0.5P; electrolyte Schottky contact; photo-emf spectra; photoluminescence; photovoltage spectroscopy; planar photoconductivity; semiconductor-electrolyte system; Energy measurement; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical polarization; Optical scattering; Photonic band gap; Spectroscopy; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205403
  • Filename
    1205403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3531641