Title :
CuPt-type ordering in In0.5Ga0.5P probed by photovoltage spectroscopy in semiconductor-electrolyte system
Author :
Baidus, N.V. ; Vasilevskiy, M.I. ; Gomes, M.J.M. ; Zvonkov, B.N.
Author_Institution :
Physico-Tech. Res. Inst., N.I. Lobachevskii Univ., Nizhny Novgorod, Russia
Abstract :
We show the usefulness of the photovoltage (PV) spectroscopy in the semiconductor-electrolyte system for probing the electronic effects of the ordering. We compare photo-e.m.f. spectra measured for an electrolyte Schottky contact made on InGaP layers with different degree of order, to results obtained by using other spectroscopy techniques, namely, photoluminescence (PL) and planar photoconductivity (PC) measurements.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoconductivity; semiconductor epitaxial layers; semiconductor-electrolyte boundaries; CuPt-type ordering; In0.5Ga0.5P; electrolyte Schottky contact; photo-emf spectra; photoluminescence; photovoltage spectroscopy; planar photoconductivity; semiconductor-electrolyte system; Energy measurement; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical polarization; Optical scattering; Photonic band gap; Spectroscopy; Substrates; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205403
