Highly carbon doped InGaAs grown in an AIX 2600G3 Multiwafer Planetary Reactor®

Author

Christiansen, K. ; McNelis, L. ; Hofeldt, J. ; Williams, D.M. ; Deufel, M. ; Schmitz, D. ; Heuken, M.

Author_Institution

AIXTRON AG, Aachen, Germany

fYear

2003

fDate

12-16 May 2003

Firstpage

418

Lastpage

420

Abstract

The growth of highly carbon doped lattice matched InGaAs grown on semi-insulating InP is investigated in an AIX 2600G3 Multiwafer Planetary Reactor®. A systematical investigation of the dependency of growth temperature, V/III ratio and doping concentration was conducted using CBr₄ as C precursor and AsH₃ as group V source. Subsequent to the growth an in-situ anneal step with TMAs was applied to activate carriers in the InGaAs layer. The highest achieved p-type carrier concentration is 6×10¹⁹ cm^-3 grown at 440°C with a V/III ratio of 1.5. The layers were investigated by XRD, sheet resistance- and Hall-effect measurements.

Keywords

Hall effect; III-V semiconductors; MOCVD; MOCVD coatings; X-ray diffraction; annealing; carbon; carrier density; electrical resistivity; gallium arsenide; indium compounds; semiconductor growth; semiconductor thin films; 440 degC; AIX 2600G3 Multiwafer Planetary Reactor; AsH₃; CBr₄; Hall-effect; InGaAs:C; InP; V/III ratio; XRD; annealing; doping concentration; growth temperature; highly carbon doped InGaAs; p-type carrier concentration; sheet resistance; Annealing; Ash; Doping; Electrical resistance measurement; Extraterrestrial measurements; Indium gallium arsenide; Indium phosphide; Lattices; Temperature dependence; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205405

Filename

1205405