Highly carbon doped InGaAs grown in an AIX 2600G3 Multiwafer Planetary Reactor®

The growth of highly carbon doped lattice matched InGaAs grown on semi-insulating InP is investigated in an AIX 2600G3 Multiwafer Planetary Reactor®. A systematical investigation of the dependency of growth temperature, V/III ratio and doping concentration was conducted using CBr₄ as C precursor and AsH₃ as group V source. Subsequent to the growth an in-situ anneal step with TMAs was applied to activate carriers in the InGaAs layer. The highest achieved p-type carrier concentration is 6×10¹⁹ cm^-3 grown at 440°C with a V/III ratio of 1.5. The layers were investigated by XRD, sheet resistance- and Hall-effect measurements.