Effect of doping in barrier on photo-reflectance spectra of InGaAs/InAlAs MQWs; donor-states and QW eigen-states

Author

Kotera, N. ; Ohshima, K. ; Tanaka, K. ; Washima, M. ; Nakamura, H.

Author_Institution

Kyushu Inst. of Technol., Fukuoka, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

425

Lastpage

428

Abstract

We have observed the ground and the first-higher impurity states associated with InGaAs conduction subbands in photo-reflectance spectra of InGaAs/InAlAs multi-quantum well (MQW), using a series of differently doped specimens. Donors were homogeneously doped within InAlAs barriers. A series of three interband transitions between conduction and valence subbands were identified by comparing our previous photocurrent spectroscopy and by fitting the difference of eigen-energies using Kane´s nonparabolic band theory.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; ground states; impurity states; indium compounds; photoreflectance; semiconductor quantum wells; InGaAs-InAlAs; InGaAs/InAlAs MQWs; Kane´s nonparabolic band theory; QW eigenstates; donor-states; doping effect; impurity states; interband transitions; photo-reflectance spectra; Doping; Epitaxial layers; Impurities; Indium compounds; Indium gallium arsenide; Optical modulation; Photonic crystals; Photonic integrated circuits; Quantum well devices; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205407

Filename

1205407