Title :
Energy-band structures of GaInAsP/InP vertically stacked multiple quantum-wire lasers with strain-compensating barriers
Author :
Haque, Anisul ; Yagi, Hideki ; Sano, Takuya ; Maruyama, Takeo ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Wire-width dependence of the large energy blue-shift in strain-compensated GaInAsP/InP vertically stacked multiple quantum-wire structures is accurately explained for the first time using an 8 band k·p theory without any fitting parameter. Variations of energy levels due to a non-uniform strain profile in stacked quantum-wires are calculated to be less than 2.4meV. It is found that unlike quantum films, the energy-band structures of strained quantum wires depend on the amount of strain-compensation in barrier regions and on the number of wire layers in the vertical stack.
Keywords :
III-V semiconductors; band structure; gallium arsenide; indium compounds; internal stresses; k.p calculations; quantum well lasers; semiconductor device models; semiconductor quantum wires; spectral line shift; 8 band k·p theory; GaInAsP-InP; GaInAsP/InP vertically stacked multiple quantum-wire lasers; blue-shift; energy levels; energy-band structure; energy-band structures; nonuniform strain profile; strain-compensating barriers; strain-compensation; wire-width dependence; Capacitive sensors; Conducting materials; Electron beams; Etching; Indium phosphide; Lithography; Quantum mechanics; Spontaneous emission; Substrates; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205409
