• DocumentCode
    3531763
  • Title

    InAsN/GaAsN quantum dots grown on GaAs substrate by solid source MBE

  • Author

    Sun zhongzhe ; Yew Kuok Chuin

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    448
  • Lastpage
    451
  • Abstract
    InAsN/GaAsN quantum dots were grown on GaAs substrate by MBE. Structure and optical properties of single layer and multilayer dots were characterized and analyzed by photoluminescence and atomic force microscopy. High density InAsN dot (1.1×1011 cm-2) is achieved. Multilayer is found to increase the emission wavelength to 1120nm with the effect of electron state couple between dots in different layers.
  • Keywords
    III-V semiconductors; atomic force microscopy; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; 1120 nm; GaAs; InAsN-GaAsN; InAsN/GaAsN quantum dots; atomic force microscopy; electron state coupling; optical properties; photoluminescence; solid source MBE; structure; Atom optics; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Nonhomogeneous media; Optical microscopy; Photoluminescence; Quantum dots; Solids; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205413
  • Filename
    1205413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3531763