Drift dominated InP photodetectors with high quantum efficiency

Author

Sun, Yanning ; Campbell, Joe C. ; Wang, Shuling ; Beck, Ariane L. ; Chen, An ; Yulius, Aristo ; Woodall, Jerry M.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

502

Lastpage

505

Abstract

We present a drift dominated InP N-I-P photodetector, which can more efficiently collect the carriers generated by photon absorption by drift created by an electric field throughout the active layer instead of by diffusion associated with normal PN or PIN junction diodes and results in high and flat spectral response from UV to near infrared. It also promises to be an avalanche photodiode with high responsitivity, high gain-bandwidth product, and low noise.

Keywords

III-V semiconductors; avalanche photodiodes; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; semiconductor device noise; ultraviolet detectors; InP; InP N-I-P photodetector; PIN junction diodes; PN junction diodes; UV to near infrared range; active layer; avalanche photodiode; diffusion; drift dominated InP photodetectors; electric field; high flat spectral response; high gain-bandwidth product; high quantum efficiency; high responsivity; low noise; photon absorption; Absorption; Degradation; Diodes; Doping; Epitaxial layers; Indium phosphide; Optical noise; Photodetectors; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205426

Filename

1205426