Title :
Novel characterization technique for GaAs/GaInP heterojunction bipolar transistor wafers based on Fourier transformed photoreflectance enabling selective determination of interface electric fields
Author :
Kita, Toshihiro ; Kakutani, T. ; Wada, O.
Author_Institution :
Fac. of Eng., Kobe Univ., Japan
Abstract :
We have developed a new contactless characterization technique for GaAs/Ga0.5In0.5P heterojunction bipolar transistor (HBT) wafers using photoreflectance (PR) spectroscopy. The use of Fourier transformation (FT) of the PR spectrum succeeds in resolving the signals coming from the emitter-base and base-collector interfaces. The evaluated interface electric fields were compared with capacitance obtained from capacitance-voltage (C-V) measurements and interpreted by considering atomic ordering in the Ga0.5In0.5P emitter.
Keywords :
Fourier transform spectra; III-V semiconductors; capacitance; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoreflectance; Fourier transformed photoreflectance; Franz-Keldysh oscillation; Ga0.5In0.5P; Ga0.5In0.5P emitter; GaAs-GaInP; GaAs/GaInP heterojunction bipolar transistor wafers; atomic ordering; base-collector interface; capacitance; characterization technique; emitter-base interface; interface electric fields; Atomic measurements; Capacitance-voltage characteristics; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Light sources; Optical modulation; Optical reflection; Signal resolution; Spectroscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205433
