• DocumentCode
    3532473
  • Title

    Studies on dependence of wet oxidation kinetics of AlAs layer in vertical-cavity surface-emitting laser structures on different physical parameters

  • Author

    Koley, Bikash ; Dagenais, Mario ; Simonis, G. ; Pham, Jennifer ; Johnson, Francis ; Whaley, R.

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    1998
  • fDate
    3-8 May 1998
  • Firstpage
    200
  • Lastpage
    201
  • Abstract
    Summary form only given. The dependence of the wet oxidation rate of AlAs on different experimental parameters as well as the thickness of the AlAs layer has been studied. A theory to explain the dependence of oxidation rate on different physical parameters for both diffusion-limited and reaction-limited situations has been presented, based on a diffusion-reaction process for selective oxidation of AlAs layer. For a given experimental condition, this theory can effectively predict the oxidation rate of an AlAs layer of any given thickness.
  • Keywords
    III-V semiconductors; aluminium compounds; optical fabrication; oxidation; reaction rate constants; semiconductor lasers; surface emitting lasers; AlAs; VCSEL structures; diffusion-limited situations; diffusion-reaction process; laser fabrication; layer thickness dependence; physical parameters dependence; reaction-limited situations; selective oxidation; wet oxidation kinetics; wet oxidation rate; Electron optics; Kinetic theory; Laser theory; Optical modulation; Oxidation; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    1-55752-339-0
  • Type

    conf

  • DOI
    10.1109/CLEO.1998.676053
  • Filename
    676053