Title :
Studies on dependence of wet oxidation kinetics of AlAs layer in vertical-cavity surface-emitting laser structures on different physical parameters
Author :
Koley, Bikash ; Dagenais, Mario ; Simonis, G. ; Pham, Jennifer ; Johnson, Francis ; Whaley, R.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. The dependence of the wet oxidation rate of AlAs on different experimental parameters as well as the thickness of the AlAs layer has been studied. A theory to explain the dependence of oxidation rate on different physical parameters for both diffusion-limited and reaction-limited situations has been presented, based on a diffusion-reaction process for selective oxidation of AlAs layer. For a given experimental condition, this theory can effectively predict the oxidation rate of an AlAs layer of any given thickness.
Keywords :
III-V semiconductors; aluminium compounds; optical fabrication; oxidation; reaction rate constants; semiconductor lasers; surface emitting lasers; AlAs; VCSEL structures; diffusion-limited situations; diffusion-reaction process; laser fabrication; layer thickness dependence; physical parameters dependence; reaction-limited situations; selective oxidation; wet oxidation kinetics; wet oxidation rate; Electron optics; Kinetic theory; Laser theory; Optical modulation; Oxidation; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676053
