DocumentCode
3532473
Title
Studies on dependence of wet oxidation kinetics of AlAs layer in vertical-cavity surface-emitting laser structures on different physical parameters
Author
Koley, Bikash ; Dagenais, Mario ; Simonis, G. ; Pham, Jennifer ; Johnson, Francis ; Whaley, R.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1998
fDate
3-8 May 1998
Firstpage
200
Lastpage
201
Abstract
Summary form only given. The dependence of the wet oxidation rate of AlAs on different experimental parameters as well as the thickness of the AlAs layer has been studied. A theory to explain the dependence of oxidation rate on different physical parameters for both diffusion-limited and reaction-limited situations has been presented, based on a diffusion-reaction process for selective oxidation of AlAs layer. For a given experimental condition, this theory can effectively predict the oxidation rate of an AlAs layer of any given thickness.
Keywords
III-V semiconductors; aluminium compounds; optical fabrication; oxidation; reaction rate constants; semiconductor lasers; surface emitting lasers; AlAs; VCSEL structures; diffusion-limited situations; diffusion-reaction process; laser fabrication; layer thickness dependence; physical parameters dependence; reaction-limited situations; selective oxidation; wet oxidation kinetics; wet oxidation rate; Electron optics; Kinetic theory; Laser theory; Optical modulation; Oxidation; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676053
Filename
676053
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