Modeling and parameter identification of crystalline silicon photovoltaic devices

Author

Yordanov, Georgi Hristov ; Midtgård, Ole-Morten ; Norum, Lars

Author_Institution

Univ. of Agder, Grimstad, Norway

fYear

2011

fDate

14-16 June 2011

Firstpage

574

Lastpage

577

Abstract

This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.

Keywords

elemental semiconductors; maximum power point trackers; photovoltaic power systems; silicon; Si; apparent shunt current; crystalline silicon photovoltaic devices; electrical characteristics; maximum-power point; ohmic-like behavior; parameter identification; shunt resistance; standard single-exponential model; IP networks; Integrated circuit modeling; Mathematical model; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Crystalline Silicon; Photovoltaic modules; Semiconductor device modeling; Shunt;

fLanguage

English

Publisher

ieee

Conference_Titel

Clean Electrical Power (ICCEP), 2011 International Conference on

Conference_Location

Ischia

Print_ISBN

978-1-4244-8929-9

Electronic_ISBN

978-1-4244-8928-2

Type

conf

DOI

10.1109/ICCEP.2011.6036313

Filename

6036313