DocumentCode
35328
Title
High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped 
Gate Dielectric
Author
Yana Gao ; Xifeng Li ; Longlong Chen ; Jifeng Shi ; Xiao Wei Sun ; Jianhua Zhang
Author_Institution
Key Lab. of Adv. Display & Syst. Applic., Shanghai Univ., Shanghai, China
Volume
35
Issue
5
fYear
2014
fDate
May-14
Firstpage
554
Lastpage
556
Abstract
In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 °C and had a smooth surface with root-mean-square roughness of <;0.35 nm. The relative dielectric constant of AZO thin film annealed at 400 °C is 19.67. And HIZO TFTs with AZO gate oxide exhibited a high saturation field-effect mobility of 18.1 cm2/Vs, a small subthreshold swing of 0.4 V/decade, and a high ON/OFF ratio of 107, which can satisfy the backplate requirements for flat panel displays.
Keywords
aluminium compounds; flat panel displays; hafnium compounds; indium compounds; permittivity; thin film transistors; zinc compounds; zirconium compounds; Al:ZrO2; HfInZnO; ON-OFF ratio; amorphous phase; backplate requirements; flat panel displays; gate dielectric; high mobility solution-processed TFT; high saturation field-effect mobility; relative dielectric constant; root-mean-square roughness; subthreshold swing; temperature 400 degC; temperature 600 degC; thin-film transistors; Annealing; Dielectric constant; Indium tin oxide; Logic gates; Substrates; Transistors; Al-doped ${rm ZrO}_{2}$; Al-doped ZrO₂; amorphrous; high mobility; solution; thin film transistor (TFT); thin film transistor (TFT).;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2310120
Filename
6767043
Link To Document