Ferromagnetic transition-metal-doped tin dioxide thin films

Author

Hong, Nguyen Hoa ; Sakai, Joe ; Ruyter, Antoine ; Prellier, W. ; Hassini, Awatef ; Brize, Virginie

Author_Institution

Lab. LEMA, Univ. F. Rabelais, Tours, France

fYear

2005

fDate

4-8 April 2005

Firstpage

775

Lastpage

776

Abstract

Induced ferromagnetism (FM) above room temperature in Cr/Ni/V-doped SnO₂ thin films was studied. 200 nm-thick films were grown using pulsed laser deposition technique. Structural study, magnetization measurements and chemical composition determination were done through X-ray diffraction, magnetic force microscopy at room temperature and Rutherford backscattering spectroscopy. Findings prove that doping a small amount of transition metal in nonmagnetic oxides could introduce FM thru Ruderman, Kittel, Kasuya, and Yoshida (RKKY) interaction.

Keywords

RKKY interaction; Rutherford backscattering; X-ray diffraction; chemical analysis; chromium; ferromagnetic materials; magnetic force microscopy; magnetic semiconductors; magnetic thin films; magnetisation; nickel; pulsed laser deposition; semiconductor doping; semiconductor thin films; tin compounds; vanadium; 200 nm; Al₂O₃; LaAlO₃; RKKY interaction; Ruderman, Kittel, Kasuya and Yoshida interaction; Rutherford backscattering spectroscopy; SnO₂:Cr; SnO₂:Ni; SnO₂:V; X-ray diffraction; chemical composition; doping; ferromagnetic thin films; ferromagnetism; magnetic force microscopy; magnetization; pulsed-laser deposition; room temperature; structural study; transition metal; Chemical lasers; Chromium; Laser transitions; Magnetic films; Optical pulses; Pulsed laser deposition; Sputtering; Temperature; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463816

Filename

1463816