Ferromagnetism in dilute magnetic semiconductors and new materials for spintronics

Author

Ivanov, V.A. ; Fleuro, V. ; Kikoin, K. ; Novotortsev, V.M. ; Aminov, T.G. ; Marenkin, S.F. ; Shabunina, G.G. ; Koroleva, L.I. ; Kalinnikov, V.T. ; Aronzon, B.A. ; Rylkov, V.V. ; Gudenko, S.V.

Author_Institution

N. S. Kurkanov Inst. of Gen. & Inorg. Chem., Moscow, Russia

fYear

2005

fDate

4-8 April 2005

Firstpage

777

Lastpage

778

Abstract

Mn-doped polycrystals and single crystals of CdGeAs₂ have been synthesized by chemical technology and their semiconducting and magnetic properties were studied. Starting from around 3 mole% and above the Mn-ions begin to occupy the Ge⁴⁺ sites, the complexes Mn²⁺ +2p with weak bound holes p supply the hh in a valence band. This is confirmed by ESR, synchrotron measurements and X-ray analysis. Ferromagnetism was observed in samples at 3 and 6%Mn. In why-type samples, ferromagnetism is derived from the kinematic exchange between Mn²⁺ + p complexes, while in (CdGe,Mn)As₂, ferromagnetism is governed by the kinematic exchange between Mn²⁺ + 2p complexes mainly on the Ge-sites via empty states near the top of the valence band.

Keywords

X-ray analysis; cadmium compounds; exchange interactions (electron); ferromagnetic materials; impurity states; magnetoelectronics; paramagnetic resonance; semiconductor doping; semimagnetic semiconductors; ternary semiconductors; valence bands; CdGeAs₂:Mn; ESR; Ge⁴⁺ sites; Mn-doped polycrystals; X-ray analysis; bound holes; chemical technology; dilute magnetic semiconductors; empty states; ferromagnetism; kinematic exchange; magnetic properties; semiconducting properties; spintronics; synchrotron measurements; valence band; Chemical technology; Crystalline materials; Crystals; Kinematics; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetoelectronics; Semiconductivity; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463817

Filename

1463817