Title :
ECORCE: A TCAD Tool for Total Ionizing Dose and Single Event Effect Modeling
Author :
Michez, A. ; Dhombres, S. ; Boch, J.
Author_Institution :
IES, Univ. Montpellier, Montpellier, France
Abstract :
TCAD software for device modeling, called ECORCE, is presented. ECORCE is based on a classical drift-diffusion model and is distributed under the GPL. It facilitates TCAD modeling by providing an easy-to-use graphical user interface for defining the geometry and physical model of the devices, executing calculations, and analyzing results. Furthermore, by integrating a dynamic mesh generator, ECORCE frees the user from the meshing step for either DC or transient analysis. ECORCE allows Single Event Effect modeling and features a restricted diffusion add-on that accounts for the kinetics of the trapping-detrapping process in insulators. This paper demonstrates that ECORCE models the Single Event Effect and Total Ionizing Dose response of MOS devices. Experimental results are modeled quantitatively.
Keywords :
MIS devices; graphical user interfaces; mesh generation; radiation hardening (electronics); technology CAD (electronics); DC analysis; ECORCE; GPL; MOS devices; TCAD tool; device geometry; device modeling; device physical model; drift-diffusion model; dynamic mesh generator; graphical user interface; insulators; single-event effect modeling; total ionizing dose response; transient analysis; trapping-detrapping process; Electron traps; Junctions; Mathematical model; Semiconductor process modeling; Software; Transient analysis; Dynamic mesh; TCAD software; electronic device modeling; single event effect; total ionizing dose; trapping in oxides;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2449281