DocumentCode
3533210
Title
Process Simulation and Analysis for PIN Detector
Author
Shrivastava, Samichi ; Henry, Rabinder
Author_Institution
MS VLSI Design & Microelectron., Int. Inst. of Inf. Technol., Pune
fYear
2009
fDate
28-29 April 2009
Firstpage
1
Lastpage
4
Abstract
Bhabha Atomic Research Centre has been exploring some of the unique features of silicon detector in a variety of nuclear structure experiment using high energy photons and heavy ions projectiles. Current experimental application makes use of large area silicon detector with depletion thickness of ~150-1000 mum. The low cost silicon detector shows excellent energy and position resolution. In this paper, we discuss the simulation result for silicon detector using SILVACO and the physical mechanism involved in detector operation and one set of mask designing for the silicon radiation detector then we will clarify how these effects set a limit to achievable timing performance.
Keywords
elemental semiconductors; p-i-n photodiodes; particle detectors; silicon; Bhabha Atomic Research Centre; PIN detector; SILVACO; Si; heavy ions projectiles; high energy photons; nuclear structure experiment; process simulation; silicon detector; silicon radiation detector; Analytical models; Diodes; Energy resolution; Face detection; Information technology; Microelectronics; Radiation detectors; Silicon radiation detectors; Spectroscopy; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Testing and Diagnosis, 2009. ICTD 2009. IEEE Circuits and Systems International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-2587-7
Type
conf
DOI
10.1109/CAS-ICTD.2009.4960857
Filename
4960857
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