Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Author

Ker, Ming-Dong ; Lee, Chien-Ming

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

Keywords

CMOS integrated circuits; electrostatic discharge; integrated circuit noise; protection; radiofrequency integrated circuits; semiconductor diodes; 0.25 micron; CMOS process; ESD protection device; RF circuit; STI diode; noise figure; poly-gated diode; power gain; two-port GSG measurement; CMOS process; Circuits; Diodes; Electrostatic discharge; Electrostatic interference; Noise figure; Power measurement; Protection; Radio frequency; Radiofrequency interference;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205559

Filename

1205559