DocumentCode :
3533233
Title :
An 8-bit, 1mW successive approximation ADC in SOI CMOS
Author :
Culurciello, Eugenio ; Andreou, Andreas
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume :
1
fYear :
2003
fDate :
25-28 May 2003
Abstract :
A low-power 8-bit successive approximation Analog to Digital Converter (ADC) was designed and fabricated in a 0.5μm Silicon on Sapphire CMOS technology. The ADC is capable of 32MHz operation, producing 1.23MS/s, consuming 1.5mW at 3.3V supply. It uses an active area of 450×315μm2 and 916×790μm2 including output pads. The acceptable input swing is 2.1V at 3.3V supply. The ADC is a mixed mode analog-digital circuitry performing algorithmic conversion of an analog input voltage into an 8-bit binary code. The lack of parasitics in the Silicon on Sapphire fabrication process simplifies the design of analog to digital converters. The circuit design is freed from the unaccounted bulk capacitances which generate feedback and corrupt the performance of the ADC at high frequency.
Keywords :
CMOS integrated circuits; analogue-digital conversion; low-power electronics; mixed analogue-digital integrated circuits; silicon-on-insulator; 0.5 micron; 1 mW; 3.3 V; 32 MHz; 8 bit; SOI CMOS technology; Si-Al2O3; low-power successive approximation analog-to-digital converter; mixed-mode analog-digital circuit; silicon-on-sapphire fabrication process; Analog-digital conversion; Binary codes; CMOS technology; Circuit synthesis; Fabrication; Frequency; Parasitic capacitance; Process design; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
Type :
conf
DOI :
10.1109/ISCAS.2003.1205560
Filename :
1205560
Link To Document :
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