Title :
Orthogonal shape/intrinsic anisotropy toggle-MRAM
Author :
Wang, S.-Y. ; Fujiwara, H.
Author_Institution :
Dept. of Phys. & Astron., MINT Center, Tuscaloosa, AL, USA
Abstract :
The general features of magnetisation response of bilayer systems to an applied field is investigated to facilitate better understanding of the mechanism of the toggle-switching. Based on the detailed analysis of the response of the magnetisations of the SAF (synthetic antiferromagnet) using Stoner-Wohlfarth model, it is reported that the operating field can be substantially reduced by setting the shape anisotropy orthogonal to the intrinsic induced anisotropy, keeping the direction of the stable anti-parallel configuration parallel to the intrinsic anisotropy when no field is applied.
Keywords :
antiferromagnetism; induced anisotropy (magnetic); magnetic storage; magnetic switching; magnetisation; random-access storage; MRAM; Stoner-Wohlfarth model; intrinsic induced anisotropy; magnetisations; operating field; shape anisotropy; synthetic antiferromagnet; toggle switching; Anisotropic magnetoresistance; Bismuth; Notice of Violation;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463846