• DocumentCode
    3533361
  • Title

    Orthogonal shape/intrinsic anisotropy toggle-MRAM

  • Author

    Wang, S.-Y. ; Fujiwara, H.

  • Author_Institution
    Dept. of Phys. & Astron., MINT Center, Tuscaloosa, AL, USA
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    835
  • Lastpage
    836
  • Abstract
    The general features of magnetisation response of bilayer systems to an applied field is investigated to facilitate better understanding of the mechanism of the toggle-switching. Based on the detailed analysis of the response of the magnetisations of the SAF (synthetic antiferromagnet) using Stoner-Wohlfarth model, it is reported that the operating field can be substantially reduced by setting the shape anisotropy orthogonal to the intrinsic induced anisotropy, keeping the direction of the stable anti-parallel configuration parallel to the intrinsic anisotropy when no field is applied.
  • Keywords
    antiferromagnetism; induced anisotropy (magnetic); magnetic storage; magnetic switching; magnetisation; random-access storage; MRAM; Stoner-Wohlfarth model; intrinsic induced anisotropy; magnetisations; operating field; shape anisotropy; synthetic antiferromagnet; toggle switching; Anisotropic magnetoresistance; Bismuth; Notice of Violation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1463846
  • Filename
    1463846