DocumentCode
3533361
Title
Orthogonal shape/intrinsic anisotropy toggle-MRAM
Author
Wang, S.-Y. ; Fujiwara, H.
Author_Institution
Dept. of Phys. & Astron., MINT Center, Tuscaloosa, AL, USA
fYear
2005
fDate
4-8 April 2005
Firstpage
835
Lastpage
836
Abstract
The general features of magnetisation response of bilayer systems to an applied field is investigated to facilitate better understanding of the mechanism of the toggle-switching. Based on the detailed analysis of the response of the magnetisations of the SAF (synthetic antiferromagnet) using Stoner-Wohlfarth model, it is reported that the operating field can be substantially reduced by setting the shape anisotropy orthogonal to the intrinsic induced anisotropy, keeping the direction of the stable anti-parallel configuration parallel to the intrinsic anisotropy when no field is applied.
Keywords
antiferromagnetism; induced anisotropy (magnetic); magnetic storage; magnetic switching; magnetisation; random-access storage; MRAM; Stoner-Wohlfarth model; intrinsic induced anisotropy; magnetisations; operating field; shape anisotropy; synthetic antiferromagnet; toggle switching; Anisotropic magnetoresistance; Bismuth; Notice of Violation;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1463846
Filename
1463846
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