Bipolar reverse recovery behavior of the body-diode of a SiC JFET

This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normally on 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region. The hole current is increasing the charge in the space charge region and the gradient of electrical field increases. A higher gradient of electrical field with the same switching speed causes a higher current through the miller capacitance. Due to this there is a increase in parasitic turn-on. This theory is confirmed by the analyses of experiments.