Edge domain dependent pinning effect by the stray field in the patterned magnetic tunnel junction

Author

Shimomura, Naoharu ; Kishi, T. ; Yoshikawa, Masatosh ; Kitagawa, Eiji ; Asao, Yoshiaki ; Hada, Hiromitsu ; Yoda, Hiroaki ; Tahara, Shuichi

Author_Institution

Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

843

Lastpage

844

Abstract

The switching characteristic of the MTJ (magnetic tunnel junction) submicron pattern is investigated. The mechanism of the step in the M-H loop analyzed. In the M-H loop of the MTJ, which has a C-type domain, a step is created by pinning of the 360-degree domain wall, which is caused by the stray field originated in the pinned layer. The position of the steps in the M-H loops is dependent on the direction of the stray field from the pinned layer. The model explains the steps in the M-H loops obtained from the experiment.

Keywords

magnetic domain walls; magnetic tunnelling; magnetisation; 360-degree domain wall; C-type domain; M-H loop; edge domain dependent pinning effect; magnetic tunnel junction; stray field; submicron pattern; switching characteristic; Analytical models; Antiferromagnetic materials; Laboratories; Magnetic switching; Magnetic tunneling; Magnetization reversal; National electric code; Random access memory; Shape; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463850

Filename

1463850