Title :
Fabrication of a vertical MRAM device
Author :
Moneck, Matthew T. ; Zhu, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
The fabrication and testing of annular shaped memory elements at the deep submicron scale is presented using combined electron beam and optical lithographic techniques. The device structures were designed for four-point probe measurements of a single ring, two rings in series, or four rings in series. The fabricated rings had a 600 nm outer diameters, 200 nm inner diameter, and consisted of three repeats of a CoFe/Cu/NiFe CPP GMR stack.
Keywords :
cobalt alloys; copper; electron beam lithography; giant magnetoresistance; iron alloys; magnetic storage; nickel alloys; photolithography; random-access storage; CoFe-Cu-NiFe; GMR; annular shaped memory elements; deep submicron scale; electron beam lithography; four-point probe measurement; optical lithography; vertical MRAM device; Electron beams; Etching; Giant magnetoresistance; Magnetic confinement; Magnetic devices; Magnetic switching; Milling; Optical device fabrication; Silicon compounds; Testing;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463853
