Broad-band transimpedance amplifier for multigigabit-per-second (40 Gbps) optical communication systems in 0.135 μm PHEMT technology

Author

Madureira, Miguel A M ; Monteiro, Paulo M P ; Aguiar, Rui L. ; Violas, Manuel ; Gloanec, Maurice ; Leclerc, Eric ; Lefebvre, Benoit

Author_Institution

Instituto de Telecomunicacoes, Aveiro Univ., Portugal

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC suitable for the 40 Gbps data transmission rate. The circuit was implemented on a well established MMIC PH15 process from United Monolithic Semiconductors (UMS) offering good yield, high performance and low cost per chip. The circuit presents a 49dBΩ gain, a low noise figure and wide bandwidth for input capacities in excess of 100 fF. An analysis considering noise, stability and the influence of bondwire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were also evaluated. On-wafer characterisation results are also presented and confronted with simulation data showing good agreement with simulated results.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; optical communication equipment; wideband amplifiers; 0.135 micron; 100 fF; 40 Gbit/s; GaAs; GaAs MMIC; PHEMT technology; bondwire inductance; broadband transimpedance amplifier; gain; input capacitance tolerance; noise figure; optical communication system; output impedance matching; stability; Circuit simulation; Costs; Data communication; Gallium arsenide; MMICs; Noise figure; Optical amplifiers; Optical fiber communication; PHEMTs; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205587

Filename

1205587