• DocumentCode
    3533790
  • Title

    Implementation of technology scaling on leakage reduction techniques using cadence tools with 45 nm technology

  • Author

    Akashe, Shyam ; Bhushan, Sushi ; Sharma, Sanjay

  • Author_Institution
    Inst. of Technol. & Manage., Gwalior, India
  • fYear
    2011
  • fDate
    28-30 Nov. 2011
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    The impact of technology scaling on three run-time leakage reduction techniques (Input Vector Control, Body Bias Control and Power Supply Gating) is evaluated by determining limits and benefits, in terms of the potential leakage reduction, performance penalty, and area and power overhead in 180nm, 90nm, and 45nm technologies. Cadence simulation results and estimations with various functional units and memory structures are presented to support a comprehensive analysis.
  • Keywords
    SRAM chips; circuit simulation; integrated circuit design; power supply circuits; Cadence simulation tool; SRAM array; body bias control; functional units; input vector control; memory structures; power supply gating; run-time leakage reduction techniques; size 180 nm; size 45 nm; size 90 nm; technology scaling; Logic gates; Leakage reduction; low power; technology scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4673-0071-1
  • Type

    conf

  • DOI
    10.1109/ICONSET.2011.6167912
  • Filename
    6167912