Title :
Reverse-conducting-IGBTs — A new IGBT technology setting new benchmarks in traction converters
Author :
Hermann, Robert ; Krafft, Eberhard Ulrich ; Marz, Andreas
Author_Institution :
Siemens AG Germany, Nuremberg, Germany
Abstract :
In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; traction power supplies; gate control strategy; reverse-conducting-IGBT; traction converters; voltage 6.5 V; Charge carriers; Electronic mail; Facsimile; Insulated gate bipolar transistors; Logic gates; Semiconductor diodes; Switches; Diode; IGBT; Traction converter;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631806
