• DocumentCode
    3533902
  • Title

    X-ray reflectivity measurement of a iridium coated MEMS optic with atomic layer deposition

  • Author

    Ogawa, Tomohiro ; Ezoe, Yuichiro ; Mitsuishi, Ikuyuki ; Kakiuchi, Takuya ; Moriyama, Teppei ; Ohashi, Takaya ; Mitsuda, Kazuhisa ; Putkonen, Matti

  • Author_Institution
    Dept. of Phys., Tokyo Metropolitan Univ., Hachioji, Japan
  • fYear
    2012
  • fDate
    6-9 Aug. 2012
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    We coated a MEMS-based silicon optic with iridium by means of atomic layer deposition. Its X-ray reflectivity is quantitatively measured using a parallel X-ray beam at Al Kα 1.49 keV.
  • Keywords
    X-ray apparatus; X-ray optics; atomic layer deposition; elemental semiconductors; iridium; micro-optics; micromechanical devices; optical variables measurement; silicon; Ir; MEMS-based silicon optic; Si; X-ray reflectivity measurement; atomic layer deposition; electron volt energy 1.49 keV; iridium coated MEMS optic; parallel X-ray beam; Atom optics; Extraterrestrial measurements; Optical films; Optical scattering; Optical variables control; Optical variables measurement; Silicon; ALD; DRIE; X-ray optics; annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical MEMS and Nanophotonics (OMN), 2012 International Conference on
  • Conference_Location
    Banff, AB
  • ISSN
    2160-5033
  • Print_ISBN
    978-1-4577-1511-2
  • Type

    conf

  • DOI
    10.1109/OMEMS.2012.6318813
  • Filename
    6318813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3533902