Title :
The SEU Cross Section Estimation in SRAM Induced by Protons of Space Environment
Author :
Zhang, Xunying ; Shen, Xubang
Author_Institution :
Xi´´an Microelectron. Technol. Inst., Xian
Abstract :
The main goal of this paper is to propose an approach to calculate proton induced SEU cross sections. The starting point is the RPP sensitive volume model and some reasonable assumptions. An approximate analytic calculational model is presented, by which the valid number of the heavy ions induced by the interaction of proton and Si nuclei will be obtained. Then, the saturated proton SEU cross section for the typical 6T SRAM can be calculated by using this number and the experimental data of heavy ions. The calculated proton SEU cross section is in good agreement with experiment results.
Keywords :
SRAM chips; integrated circuit design; RPP sensitive volume model; SEU cross section estimation; SRAM; approximate analytic calculational model; heavy ions; space environment; Atomic measurements; Cosmic rays; Embedded computing; Integrated circuit reliability; Microelectronics; Protons; Random access memory; Single event upset; Space missions; Space technology;
Conference_Titel :
Testing and Diagnosis, 2009. ICTD 2009. IEEE Circuits and Systems International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-2587-7
DOI :
10.1109/CAS-ICTD.2009.4960900
