DocumentCode
3534128
Title
Comparison of RB-IGBT and normal IGBT in T-type three-level inverter
Author
Li Zhang ; Kai Sun ; Lipei Huang ; Igarashi, Seiki
Author_Institution
State Key Lab. of Power Syst., Tsinghua Univ., Beijing, China
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
7
Abstract
A T-type three-level inverter topology with RB-IGBT is researched. The operation modes and modulation strategy is analyzed. The power loss of T-type inverter with RB-IGBT and normal IGBT is calculated and compared. Experimental results show that T-type inverter with RB-IGBT has better efficiency than that of normal IGBT.
Keywords
insulated gate bipolar transistors; invertors; power semiconductor switches; RB-IGBT; T-type three-level inverter; modulation strategy; normal IGBT; operation mode; power loss; Inductors; Insulated gate bipolar transistors; Inverters; Leakage currents; Modulation; Switching frequency; Topology; Efficiency; Inverter; RB-IGBT; Three-level; Transformerless;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6631823
Filename
6631823
Link To Document