DocumentCode
3534185
Title
Comparison between conventional, vacuum and microwave sintering of Cu-Cr-4 wt.% SiC nanocomposites
Author
Roy, Pradip Kumar ; Mula, Suhrit
Author_Institution
CG Global R&D Center, Crompton Greaves Ltd., Mumbai, India
fYear
2011
fDate
28-30 Nov. 2011
Firstpage
275
Lastpage
279
Abstract
Attempts have been made to synthesize Cu99Cr1, CU99O1-4 wt.% SiC nanocomposites for thermo-electric applications. The blend compositions were ball-milled for 50 h in a stainless steel grinding media. The compact specimens were subjected to vacuum sintering (900°C and 1000°C for lh), conventional sintering (900°C and 1000°C for 1h) and microwave sintering (800°C, 900°C and 1000°C) duration of 30 min using a furnace of 2.45 GHz frequency and 900 W power. The micro-structural characterization was carried out by X-ray diffraction and scanning electron microscopy. The mechanical properties like Vickers hardness and electrical conductivity of the sintered specimens were also investigated. In the present investigation, the best combination of mechanical properties and electrical conductivity were obtained for the microwave sintered specimens. This is possibly due to the enhanced densification achieved through microwave sintering technique. Possible sintering characteristics and strengthening mechanisms were analyzed.
Keywords
Vickers hardness; X-ray diffraction; ball milling; chromium alloys; copper alloys; densification; electrical conductivity; nanocomposites; scanning electron microscopy; silicon compounds; sintering; wide band gap semiconductors; CuCr-SiC; Vickers hardness; X-ray diffraction; ball-milling; conventional sintering; densification; electrical conductivity; frequency 2.45 GHz; mechanical properties; microstructural properties; microwave sintering; nanocomposites; power 900 W; scanning electron microscopy; stainless steel grinding media; strengthening mechanisms; temperature 800 degC to 1000 degC; time 1 h; time 30 min; time 5 h; vacuum sintering; Copper; Microwave FET integrated circuits; Nanocomposites; Plasma temperature; Silicon carbide; Three dimensional displays; X-ray scattering; Electrical conductivity; Nanocomposite; Sintering; X-ray diffraction (XRD);
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4673-0071-1
Type
conf
DOI
10.1109/ICONSET.2011.6167935
Filename
6167935
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