• DocumentCode
    3534185
  • Title

    Comparison between conventional, vacuum and microwave sintering of Cu-Cr-4 wt.% SiC nanocomposites

  • Author

    Roy, Pradip Kumar ; Mula, Suhrit

  • Author_Institution
    CG Global R&D Center, Crompton Greaves Ltd., Mumbai, India
  • fYear
    2011
  • fDate
    28-30 Nov. 2011
  • Firstpage
    275
  • Lastpage
    279
  • Abstract
    Attempts have been made to synthesize Cu99Cr1, CU99O1-4 wt.% SiC nanocomposites for thermo-electric applications. The blend compositions were ball-milled for 50 h in a stainless steel grinding media. The compact specimens were subjected to vacuum sintering (900°C and 1000°C for lh), conventional sintering (900°C and 1000°C for 1h) and microwave sintering (800°C, 900°C and 1000°C) duration of 30 min using a furnace of 2.45 GHz frequency and 900 W power. The micro-structural characterization was carried out by X-ray diffraction and scanning electron microscopy. The mechanical properties like Vickers hardness and electrical conductivity of the sintered specimens were also investigated. In the present investigation, the best combination of mechanical properties and electrical conductivity were obtained for the microwave sintered specimens. This is possibly due to the enhanced densification achieved through microwave sintering technique. Possible sintering characteristics and strengthening mechanisms were analyzed.
  • Keywords
    Vickers hardness; X-ray diffraction; ball milling; chromium alloys; copper alloys; densification; electrical conductivity; nanocomposites; scanning electron microscopy; silicon compounds; sintering; wide band gap semiconductors; CuCr-SiC; Vickers hardness; X-ray diffraction; ball-milling; conventional sintering; densification; electrical conductivity; frequency 2.45 GHz; mechanical properties; microstructural properties; microwave sintering; nanocomposites; power 900 W; scanning electron microscopy; stainless steel grinding media; strengthening mechanisms; temperature 800 degC to 1000 degC; time 1 h; time 30 min; time 5 h; vacuum sintering; Copper; Microwave FET integrated circuits; Nanocomposites; Plasma temperature; Silicon carbide; Three dimensional displays; X-ray scattering; Electrical conductivity; Nanocomposite; Sintering; X-ray diffraction (XRD);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4673-0071-1
  • Type

    conf

  • DOI
    10.1109/ICONSET.2011.6167935
  • Filename
    6167935