Improvement of IGBT model characterization with experimental tests

The dynamic IGBT model is characterized with a circuit simulator characterization tool by utilizing datasheet information and after that the model is tuned by using data from experimental measurements. The circuit simulator simulation results from both models are compared with the experimental results and the possible accuracy improvements are reported. The main research question of this work is how well these models can describe the semiconductor loss behaviour and the different voltage and current overshoots in IGBT switching event and what is the usability of the models. These issues are mainly observed and compared near the nominal collector current, but some example results with higher and smaller current are presented as well. A commercial software tool Simplorer 11 is used for the simulations and the component that is used in the comparison is FZ400R17KE4. Experimental test measurements are performed with an IGBT double pulse tester system. The comparison between the simulation models and the experimental data is reported and conclusions are made. The simulation results show that the characterized IGBT model is usable for voltage behaviour investigation of the IGBT in the hard switched operation. In addition, the measurement data characterized model achieves an acceptable accuracy considering the switching losses.