A neutron dosemeter based on a stack of two p-MOSFETs

Author

Fragopoulou, M. ; Konstantakos, V. ; Sarrabayrouse, G. ; Siskos, S. ; Laopoulos, Th ; Zamani, M.

Author_Institution

Phys. Dept., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2010

fDate

1-2 July 2010

Firstpage

71

Lastpage

74

Abstract

The dosimetric characteristics of a new type of Metal-Oxide-Semiconductor field effect transistor (MOSFET), sensitive to both thermal and intermediate-fast neutrons were studied. The dosemeters were manufactured at LAAS-CNRS Laboratory in Toulouse, France. They consist of two identical MOSFETs, fabricated on the same silicon chip and showed excellent linearity for wide dose ranges. In order to be used as neutron dosemeters, a thin film of lithium fluoride was deposited on the surface of the MOS gate above the Cr layer. Their sensitivity to thermal neutrons, up to 1eV, is much higher than that of intermediate-fast neutrons.

Keywords

MOSFET; dosimeters; neutrons; metal-oxide-semiconductor field effect transistor; neutron dosemeter; neutron dosemeters; p-MOSFET; thermal-intermediate-fast neutrons; Chromium; FETs; Laboratories; Linearity; Lithium compounds; MOSFET circuits; Manufacturing; Neutrons; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Imaging Systems and Techniques (IST), 2010 IEEE International Conference on

Conference_Location

Thessaloniki

Print_ISBN

978-1-4244-6492-0

Type

conf

DOI

10.1109/IST.2010.5548484

Filename

5548484