Title :
Synthesis and characterization of gallium nitride nanorods (GaN-NRs) for sensor and catalysis applications
Author :
Kente, Thobeka ; Coville, Neil ; Mhlanga, Sabelo
Author_Institution :
DST/NRF Centre for Excellence in Strong Mater., Univ. of the Witwatersrand, Johannesburg, South Africa
Abstract :
One-dimensional GaN nanostructures have been synthesized using a chemical vapour deposition (CVD) method. GaN nanorods were readily formed in the presence of carbon. This paper describes the role of carbon in the synthesis. The GaN nanorods were of high crystallinity and purity as revealed by XRD analysis. TEM and SEM analysis revealed that the nanorods possess diameters in the range of 50 - 450 nm, which could be controlled by varying the synthesis conditions such as gas flow rates and synthesis time. BET surface area analysis revealed very high surface areas of up 1023 m2/g for these materials. TGA revealed that the GaN materials are thermally stable.
Keywords :
III-V semiconductors; X-ray diffraction; carbon; chemical vapour deposition; gallium compounds; nanofabrication; nanorods; scanning electron microscopy; semiconductor growth; thermal analysis; thermal stability; transmission electron microscopy; wide band gap semiconductors; BET surface area analysis; C-GaN; SEM; TEM; TGA; X-ray diffraction; XRD; catalysis applications; chemical vapour deposition; crystallinity; gallium nitride nanorods; gas flow rates; one-dimensional nanostructures; scanning electron microscopy; sensor applications; size 50 nm to 450 nm; surface area; synthesis time; thermal stability; thermogravimetry; transmission electron microscopy; Fluid flow; Gallium nitride; Materials; Nanostructures; Temperature distribution; X-ray scattering; CVD; GaN; nanorods;
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
DOI :
10.1109/ICONSET.2011.6167972
