Title :
Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE
Author :
Fujimoto, Y. ; Higo, A. ; Kjellman, J.O. ; Watanabe, S. ; Sugiyama, M. ; Nakano, Y.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V heterointegration; InGaAs; InGaAs disks; InGaAs islands; Si; Si (111) substrate; broadband spectra; data-communication wavelength; luminescent spectra; microchannel selective-area MOVPE; microphotoluminescence; telecom wavelength; Epitaxial growth; Epitaxial layers; Gallium; Indium gallium arsenide; Lenses; Silicon; Substrates;
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2012 International Conference on
Conference_Location :
Banff, AB
Print_ISBN :
978-1-4577-1511-2
DOI :
10.1109/OMEMS.2012.6318872
