Title :
A data driven model for silicon carbide JFET with thermal effects
Author :
Zhu Ping ; Wang Li ; Ruan Li-gang ; Qin Jian-hua
Author_Institution :
Electr. Eng. Dept., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
Abstract :
A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that this modeling method saves the trouble of obtaining the physical parameters and the temperature of SiC JFET is taken into account. These are particularly important because the device´s physical parameters on materials and dimensions are hardly to be obtained and temperature has effects on the other major parameters. The model is implemented in SABER based on the characteristics of the datasheet and the test data. Both simulation and experiment tests are carried out for the research of static characteristics, gate switching characteristics and short-circuit characteristics, which verify the accuracy of the model. Besides, method of data driven modeling can also be applied to the other modern power devices.
Keywords :
power field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SABER; SiC; data driven model; device physical parameters; gate switching characteristics; short-circuit characteristics; silicon carbide JFET; static characteristics; thermal effects; Data models; Integrated circuit modeling; JFETs; Junctions; Mathematical model; Silicon carbide; Temperature; Data Driven; Junction Field Effect Transistor; Modeling; Silicon Carbide; Temperature;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631867
