Title :
Very low noise characteristics of AlGaAs/InGaAs HEMTs with wide head T-gate
Author :
Jin-Hee Lee ; Hyung-Sup Yoon ; Chul-Soon Park ; Hyung-Moo Park
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
Abstract :
The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; AlGaAs-InGaAs; dose split electron beam lithography; fabrication; noise; parasitic gate resistance; pseudomorphic HEMT; selective gate recess etching; wide head T-gate; Frequency; HEMTs; Indium gallium arsenide; Intrusion detection; MODFETs; Noise figure; Noise measurement; PHEMTs; Transconductance;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496239
