DocumentCode
3535173
Title
An XNOR device in hybrid InAs/AlSb/GaSb and InGaAs material systems
Author
Shen, J. ; Tehrani, S. ; Goronkin, H. ; Kramer, G. ; Tsui, R.
Author_Institution
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
fYear
1995
fDate
19-21 June 1995
Firstpage
60
Lastpage
61
Abstract
Proposes and demonstrates an XNOR device based on the resonant interband tunneling FET which combines an InAs/AlSb/GaSb resonant interband tunneling diode (RITD) with pseudomorphic InGaAs-channel field effect transistors (FET).
Keywords
III-V semiconductors; NOR circuits; aluminium compounds; combinational circuits; field effect logic circuits; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling diodes; resonant tunnelling transistors; InAs-AlSb-GaSb-InGaAs; XNOR device; pseudomorphic field effect transistors; resonant interband tunneling FET; resonant interband tunneling diode; Current-voltage characteristics; Equivalent circuits; Hysteresis; Indium gallium arsenide; Timing; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496271
Filename
496271
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