GaAs/AlGaAs electrooptic modulator with novel electrodes and bandwidth in excess of 40 GHz

This abstract reports the latest results of our ongoing effort on GaAs/AlGaAs traveling wave Mach-Zehnder electrooptic modulators. Previously we reported >40 GHz electrical bandwidths but with rather large on/off voltage V/sub /spl pi//. By introducing a completely different electrode design we have reduced the V/sub /spl pi// from 28 V to 10 V while keeping the measured bandwidth >40 GHz. Furthermore the new design reduces the microwave loss, which determines the bandwidth, from 4.6 to 3.2 dB/cm at 35 GHz. Additionally, this new electrode geometry has the potential for further V/sub /spl pi// reduction while maintaining low loss.