A 140 GHz f/sub max/ InAlAs/InGaAs pulse-doped InGaAlAs quaternary collector HBT with a 20 V BVceo

Author

Cowles, J. ; Tran, L. ; Block, T. ; Streit, D. ; Oki, A.

Author_Institution

TRW Space & Electron. Group, Redondo Beach, CA, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

84

Lastpage

85

Abstract

Although InP-based HBTs have shown excellent RF performance, the low breakdown and Early voltages of InGaAs collectors have limited their insertion into high linearity and power amplifiers. InAlAs/InGaAs NpN double-HBTs with compositionally graded quaternary InGaAlAs collectors realized a high BVceo of 20V with minimal carrier blocking up to high current densities. The same device exhibited an ft and fmax of 58 GHz and 140 GHz, respectively, which is comparable to otherwise identical InGaAs collector devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; 140 GHz; 20 V; InAlAs-InGaAs; InAlAs/InGaAs NpN double HBTs; InGaAlAs; RF performance; breakdown voltage; carrier blocking; compositionally graded pulse-doped quaternary InGaAlAs collectors; early voltage; Breakdown voltage; Current density; Heterojunction bipolar transistors; High power amplifiers; Indium gallium arsenide; Linearity; Pulse generation; Radio frequency; Radiofrequency amplifiers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496281

Filename

496281