Title :
Analysis of the TID Induced Failure Modes in NOR and NAND Flash Memories
Author :
Yihua Yan ; Wei Chen ; Ruyu Fan ; Xiaoqiang Guo ; Hongxia Guo ; Fengqi Zhang ; Lili Ding ; Keying Zhang ; Dongsheng Lin ; Yuanming Wang
Author_Institution :
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Abstract :
The total ionizing radiation effects of several NOR and NAND flash memories under the read only mode are investigated. An X-ray microbeam test was also performed to help detect the radiation susceptibility of different circuits. The error distribution is mapped for the NOR flash memories, featuring significant address related signature. Relevant circuits are analyzed to address these failure modes.
Keywords :
NAND circuits; NOR circuits; flash memories; radiation hardening (electronics); NAND flash memories; NOR flash memories; TID induced failure mode; X-ray microbeam test; address related signature; error distribution; ionizing radiation effect; radiation susceptibility; Annealing; Ash; Charge pumps; Decoding; Logic gates; Radiation effects; Threshold voltage; Address error; TID; flash memory; functional failure; microbeam;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2234138
