DocumentCode
35353
Title
Analysis of the TID Induced Failure Modes in NOR and NAND Flash Memories
Author
Yihua Yan ; Wei Chen ; Ruyu Fan ; Xiaoqiang Guo ; Hongxia Guo ; Fengqi Zhang ; Lili Ding ; Keying Zhang ; Dongsheng Lin ; Yuanming Wang
Author_Institution
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Volume
60
Issue
1
fYear
2013
fDate
Feb. 2013
Firstpage
224
Lastpage
229
Abstract
The total ionizing radiation effects of several NOR and NAND flash memories under the read only mode are investigated. An X-ray microbeam test was also performed to help detect the radiation susceptibility of different circuits. The error distribution is mapped for the NOR flash memories, featuring significant address related signature. Relevant circuits are analyzed to address these failure modes.
Keywords
NAND circuits; NOR circuits; flash memories; radiation hardening (electronics); NAND flash memories; NOR flash memories; TID induced failure mode; X-ray microbeam test; address related signature; error distribution; ionizing radiation effect; radiation susceptibility; Annealing; Ash; Charge pumps; Decoding; Logic gates; Radiation effects; Threshold voltage; Address error; TID; flash memory; functional failure; microbeam;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2234138
Filename
6423852
Link To Document